STD13N60M2

Teknik Özellikler

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

11A

Transistor Application

SWITCHING

Number Of Elements

1

Transistor Element Material

SILICON

Fet Type

N-Channel

Turn On Delay Time

11 ns

Uzunluk

6.6mm

Terminal Sayısı

2

Drain To Source Voltage Vdss

600V

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Breakdown Voltage

650V

ECCN Kodu

EAR99

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

17nC @ 10V

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

44A

Direnç

380mOhm

Temel Parça No

STD13

Power Dissipation Max

110W Tc

Genişlik

6.2mm

Turn Off Delay Time

41 ns

Pin Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

10ns

Input Capacitance Ciss Max Vds

580pF @ 100V

Rds On Max Id Vgs

380m Ω @ 5.5A, 10V

Vgs Max

±25V

Power Dissipation

110W

Radyasyon Dayanımı

No

Kurşunsuz

Lead Free

Yükseklik

2.4mm

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Ambalaj

Cut Tape (CT)

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Seri

MDmesh™ II Plus