STD12N60M2

Teknik Özellikler

Rds On Max Id Vgs

450m Ω @ 4.5A, 10V

Vgs Max

±25V

Jesd30 Code

R-PSSO-G2

Input Capacitance Ciss Max Vds

538pF @ 100V

Temel Parça No

STD12

Power Dissipation Max

85W Tc

Drain Currentmax Abs Id

9A

Pulsed Drain Currentmax Idm

36A

Çalışma Sıcaklığı

150°C TJ

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

9A Tc

Drive Voltage Max Rds On Min Rds On

10V

Drainsource On Resistancemax

0.45Ohm

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Ambalaj

Cut Tape (CT)

Seri

MDmesh™ M2

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

Yüzey Montaj

YES

Fet Type

N-Channel

Terminal Pozisyonu

SINGLE

Terminal Sayısı

2

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Number Of Elements

1

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

THROUGH-HOLE

Gate Charge Qg Max Vgs

16nC @ 10V

Vgsth Max Id

4V @ 250μA

Fabrika Tedarik Süresi

16 Weeks

Avalanche Energy Rating Eas

117 mJ

Drain To Source Voltage Vdss

600V

Ds Breakdown Voltagemin

600V