STD11NM60ND

Teknik Özellikler

Max Junction Temperature Tj

150°C

Transistor Application

SWITCHING

Continuous Drain Current Id

10A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Uzunluk

6.6mm

Turn On Delay Time

16 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Drain To Source Breakdown Voltage

600V

ECCN Kodu

EAR99

Element Configuration

Single

Fabrika Tedarik Süresi

16 Weeks

Terminal Formu

GULL WING

Vgsth Max Id

5V @ 250μA

Rise Time

7ns

Temel Parça No

STD11

Power Dissipation Max

90W Tc

Terminal Kaplaması

Matte Tin (Sn) - annealed

Reach Svhc

No SVHC

Power Dissipation

90W

Rds On Max Id Vgs

450m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

850pF @ 50V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Gate To Source Voltage Vgs

25V

Number Of Elements

1

Fet Type

N-Channel

Threshold Voltage

3V

Avalanche Energy Rating Eas

200 mJ

Gate Charge Qg Max Vgs

30nC @ 10V

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ

JESD-609 Kodu

e3

Turn Off Delay Time

50 ns

Genişlik

6.2mm

Pin Sayısı

3