STD10NM65N

Teknik Özellikler

Drain To Source Breakdown Voltage

650V

Element Configuration

Single

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Vgsth Max Id

4V @ 250μA

Continuous Drain Current Id

9A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

Pin Sayısı

3

Transistor Element Material

SILICON

Uzunluk

6.6mm

Terminal Sayısı

2

Turn On Delay Time

12 ns

Ambalaj

Tape & Reel (TR)

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

25V

Power Dissipation Max

90W Tc

Temel Parça No

STD10

Reach Svhc

No SVHC

Rise Time

8ns

Rds On Max Id Vgs

480m Ω @ 4.5A, 10V

Input Capacitance Ciss Max Vds

850pF @ 50V

Power Dissipation

90W

Threshold Voltage

3V

Jedec95 Code

TO-252AA

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

25nC @ 10V

Number Of Elements

1

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Seri

MDmesh™ II

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Fall Time Typ

20 ns

Contact Plating

Tin

Current Continuous Drain Id25

9A Tc

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

10V