STD10NM60ND

Teknik Özellikler

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

8A

Turn On Delay Time

9.2 ns

Terminal Sayısı

2

Uzunluk

6.6mm

Transistor Element Material

SILICON

Pin Sayısı

3

Element Configuration

Single

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

650V

Drain To Source Voltage Vdss

600V

Fabrika Tedarik Süresi

16 Weeks

Vgsth Max Id

5V @ 250μA

Terminal Formu

GULL WING

Rise Time

10ns

Reach Svhc

No SVHC

Terminal Kaplaması

Matte Tin (Sn) - annealed

Power Dissipation Max

70W Tc

Temel Parça No

STD10

Power Dissipation

70W

Input Capacitance Ciss Max Vds

577pF @ 50V

Rds On Max Id Vgs

600m Ω @ 4A, 10V

Montaj Tipi

Surface Mount

Ambalaj

Cut Tape (CT)

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Number Of Elements

1

Fet Type

N-Channel

Threshold Voltage

4V

Gate Charge Qg Max Vgs

20nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj

Surface Mount

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-55°C~150°C TJ

Direnç

600mOhm

Drain Currentmax Abs Id

8A

Pin Sayısı

3

Turn Off Delay Time

32 ns

Genişlik

6.2mm