STD100N10F7

Teknik Özellikler

Transistor Element Material

SILICON

Power Dissipation

120W

Jedec95 Code

TO-220AB

Threshold Voltage

4.5V

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

46 ns

Direnç

8MOhm

Vgsth Max Id

4.5V @ 250μA

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

400 mJ

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Yükseklik

2.4mm

Ambalaj

Cut Tape (CT)

Temel Parça No

STD10

Genişlik

6.2mm

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Svhc

No SVHC

Vgs Max

±20V

Element Configuration

Single

Number Of Elements

1

Power Dissipation Max

120W Tc

Turn On Delay Time

27 ns

Drain To Source Breakdown Voltage

100V

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

3

Seri

DeepGATE™, STripFET™ VII

ECCN Kodu

EAR99

Uzunluk

6.6mm

HTS Kodu

8541.29.00.95

Gate Charge Qg Max Vgs

61nC @ 10V

Terminal Formu

THROUGH-HOLE

Input Capacitance Ciss Max Vds

4369pF @ 50V