STB85NF55LT4

Teknik Özellikler

Gate Charge Qg Max Vgs

110nC @ 5V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

12 Weeks

Temel Parça No

STB85N

Turn On Delay Time

35 ns

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Voltage Rated Dc

55V

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgsth Max Id

2.5V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 6 months ago)

Rise Time

165ns

Kurşunsuz

Lead Free

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

4

Vgs Max

±15V

Seri

STripFET™ II

Power Dissipation

300W

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Breakdown Voltage

55V

Rds On Max Id Vgs

8m Ω @ 40A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

980 mJ

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

300W Tc

Jesd30 Code

R-PSSO-G2

Direnç

8mOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ