STB7NK80Z-1

Teknik Özellikler

Pin Sayısı

3

Fall Time Typ

20 ns

Montaj

Through Hole

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

5.2A

ECCN Kodu

EAR99

Pin Sayısı

3

Fet Type

N-Channel

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

125W

JESD-609 Kodu

e3

Turn Off Delay Time

45 ns

Additional Feature

AVALANCHE RATED

Input Capacitance Ciss Max Vds

1138pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Drain To Source Breakdown Voltage

800V

Rds On Max Id Vgs

1.8 Ω @ 2.6A, 10V

Fabrika Tedarik Süresi

12 Weeks

Radyasyon Dayanımı

No

Temel Parça No

STB7N

Ambalaj

Tube

Turn On Delay Time

20 ns

Gate Charge Qg Max Vgs

56nC @ 10V

Montaj Tipi

Through Hole

Terminal Sayısı

3

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

20.8A

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 100μA

Power Dissipation Max

125W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

12ns

Terminal Kaplaması

Matte Tin (Sn)