STB75NF75T4

Teknik Özellikler

Case Connection

DRAIN

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

JESD-609 Kodu

e3

Turn Off Delay Time

66 ns

Input Capacitance Ciss Max Vds

3700pF @ 25V

Gate To Source Voltage Vgs

20V

Fall Time Typ

30 ns

ECCN Kodu

EAR99

Continuous Drain Current Id

80A

Drain Currentmax Abs Id

75A

Power Dissipation Max

300W Tc

Jesd30 Code

R-PSSO-G2

Direnç

11mOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

80A Tc

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

700 mJ

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Seri

STripFET™ II

Vgs Max

±20V

Power Dissipation

300W

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

11m Ω @ 40A, 10V

Drain To Source Breakdown Voltage

75V

Kurşunsuz

Lead Free

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA