STB60NF06LT4

Teknik Özellikler

Direnç

16mOhm

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-65°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Yükseklik

4.6mm

Current Continuous Drain Id25

60A Tc

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Genişlik

9.35mm

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

240A

Transistor Application

SWITCHING

Threshold Voltage

1V

Transistor Element Material

SILICON

Akım Değeri

60A

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Turn Off Delay Time

55 ns

Input Capacitance Ciss Max Vds

2000pF @ 25V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

4.535924g

Fall Time Typ

30 ns

Gate To Source Voltage Vgs

15V

ECCN Kodu

EAR99

Continuous Drain Current Id

60A

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgsth Max Id

1V @ 250μA

Voltage Rated Dc

60V

Rise Time

220ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Fabrika Tedarik Süresi

12 Weeks

Turn On Delay Time

35 ns

Temel Parça No

STB60N

Gate Charge Qg Max Vgs

66nC @ 4.5V