STB55NF03LT4

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1265pF @ 25V

Turn Off Delay Time

25 ns

Case Connection

DRAIN

Fet Type

N-Channel

ECCN Kodu

EAR99

Continuous Drain Current Id

55A

Gate To Source Voltage Vgs

16V

Fall Time Typ

50 ns

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

55A Tc

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

175°C TJ

Power Dissipation Max

80W Tc

Jesd30 Code

R-PSSO-G2

Threshold Voltage

1V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

220A

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

13m Ω @ 27.5A, 10V

Additional Feature

LOGIC LEVEL COMPATIBLE

Vgs Max

±16V

Seri

STripFET™

Power Dissipation

80W

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

3

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lifecycle Status

NRND (Last Updated: 7 months ago)

Drainsource On Resistancemax

0.02Ohm

Rise Time

400ns