STB4NK60Z-1

Teknik Özellikler

Power Dissipation Max

70W Tc

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4.5V @ 50μA

Current Continuous Drain Id25

4A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

150°C TJ

Rise Time

9.5ns

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drainsource On Resistancemax

2Ohm

Gate Charge Qg Max Vgs

26nC @ 10V

Montaj Tipi

Through Hole

Radyasyon Dayanımı

No

Turn On Delay Time

12 ns

Temel Parça No

STB4N

Ambalaj

Tube

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Avalanche Energy Rating Eas

120 mJ

Terminal Sayısı

3

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

16A

Transistor Application

SWITCHING

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

70W

Fet Type

N-Channel

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

2 Ω @ 2A, 10V

Drain To Source Breakdown Voltage

600V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

510pF @ 25V

Turn Off Delay Time

29 ns

Gate To Source Voltage Vgs

30V

Fall Time Typ

16.5 ns

Pin Sayısı

3

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Montaj

Through Hole