STB3NK60ZT4

Teknik Özellikler

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Genişlik

10.4mm

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

9.6A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Threshold Voltage

3.75V

Transistor Element Material

SILICON

Power Dissipation Max

45W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Current Continuous Drain Id25

2.4A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Fall Time Typ

14 ns

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

1.2A

ECCN Kodu

EAR99

Akım Değeri

2.4A

Fet Type

N-Channel

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

311pF @ 25V

Turn Off Delay Time

19 ns

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

9 ns

Temel Parça No

STB3N

Gate Charge Qg Max Vgs

11.8nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.75mm

Vgsth Max Id

4.5V @ 50μA

Voltage Rated Dc

600V

Rise Time

14ns