STB35N65M5

Teknik Özellikler

Current Continuous Drain Id25

27A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

160W Tc

Jesd30 Code

R-PSSO-G2

Direnç

98Ohm

Threshold Voltage

4V

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

800 mJ

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Cut Tape (CT)

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Turn Off Delay Time

60 ns

Input Capacitance Ciss Max Vds

3750pF @ 100V

Case Connection

ISOLATED

Fet Type

N-Channel

Continuous Drain Current Id

27A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

25V

Fall Time Typ

16 ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Rise Time

12ns

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Gate Charge Qg Max Vgs

83nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

17 Weeks