STB34N65M5

Teknik Özellikler

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

110m Ω @ 14A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Input Capacitance Ciss Max Vds

2700pF @ 100V

Turn Off Delay Time

59 ns

JESD-609 Kodu

e3

Power Dissipation

190W

Vgs Max

±25V

Seri

MDmesh™ V

Fet Type

N-Channel

Continuous Drain Current Id

28A

ECCN Kodu

EAR99

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

25V

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

28A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Yükseklik

4.6mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

190W Tc

Vgsth Max Id

5V @ 250μA

Direnç

110MOhm

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

62.5nC @ 10V

Genişlik

9.35mm