STB33N65M2

Teknik Özellikler

Avalanche Energy Rating Eas

780 mJ

Terminal Sayısı

2

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

96A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Fabrika Tedarik Süresi

26 Weeks

Genişlik

9.35mm

Ambalaj

Cut Tape (CT)

Temel Parça No

STB33N

Turn On Delay Time

13.5 ns

Gate Charge Qg Max Vgs

41.5nC @ 10V

Montaj Tipi

Surface Mount

Drainsource On Resistancemax

0.14Ohm

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.6mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Current Continuous Drain Id25

24A Tc

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

190W Tc

Jesd30 Code

R-PSSO-G2

Continuous Drain Current Id

24A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

650V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate To Source Voltage Vgs

25V

Drain To Source Voltage Vdss

650V

REACH Uyumluluk Kodu

not_compliant

Input Capacitance Ciss Max Vds

1790pF @ 100V

Turn Off Delay Time

72.5 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active