STB32NM50N

Teknik Özellikler

Radyasyon Dayanımı

No

Genişlik

9.35mm

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

88A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Power Dissipation Max

190W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

22A Tc

Yükseklik

4.6mm

Fall Time Typ

23.6 ns

Gate To Source Voltage Vgs

25V

ECCN Kodu

EAR99

Continuous Drain Current Id

22A

Fet Type

N-Channel

Case Connection

DRAIN

JESD-609 Kodu

e3

Turn Off Delay Time

110 ns

Input Capacitance Ciss Max Vds

1973pF @ 50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

Temel Parça No

STB32N

Turn On Delay Time

21.5 ns

Gate Charge Qg Max Vgs

62.5nC @ 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Vgsth Max Id

4V @ 250μA

Rise Time

9.5ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Pin Sayısı

3