STB28NM50N

Teknik Özellikler

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1735pF @ 25V

Turn Off Delay Time

62 ns

Gate To Source Voltage Vgs

25V

Fall Time Typ

52 ns

ECCN Kodu

EAR99

Continuous Drain Current Id

21A

Power Dissipation Max

150W Tc

Jesd30 Code

R-PSSO-G2

Direnç

135mOhm

Current Continuous Drain Id25

21A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

150°C TJ

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Threshold Voltage

3V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

84A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Vgs Max

±25V

Seri

MDmesh™ II

Power Dissipation

150W

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

158m Ω @ 10.5A, 10V

Drain To Source Breakdown Voltage

500V

Kurşunsuz

Lead Free

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.75mm