STB28N65M2

Teknik Özellikler

Gate To Source Voltage Vgs

25V

Drain To Source Voltage Vdss

650V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

HTS Kodu

8541.29.00.95

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

650V

Continuous Drain Current Id

20A

ECCN Kodu

EAR99

Vgs Max

±25V

Case Connection

DRAIN

Seri

MDmesh™ M2

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rds On Max Id Vgs

180m Ω @ 10A, 10V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1440pF @ 100V

Turn Off Delay Time

59 ns

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

35nC @ 10V

Turn On Delay Time

13.4 ns

Genişlik

9.35mm

Ambalaj

Cut Tape (CT)

Temel Parça No

STB28N

Fabrika Tedarik Süresi

26 Weeks

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

80A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

760 mJ

Terminal Sayısı

2

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

170W Tc

Vgsth Max Id

4V @ 250μA

Uzunluk

10.4mm