STB25N80K5

Teknik Özellikler

Turn Off Delay Time

60 ns

Input Capacitance Ciss Max Vds

1600pF @ 100V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fet Type

N-Channel

Case Connection

DRAIN

Ds Breakdown Voltagemin

800V

ECCN Kodu

EAR99

Continuous Drain Current Id

19.5A

Gate To Source Voltage Vgs

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.4mm

Current Continuous Drain Id25

19.5A Tc

Direnç

260mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

250W Tc

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

78A

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

200 mJ

Transistor Element Material

SILICON

Genişlik

8.95mm

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Rds On Max Id Vgs

260m Ω @ 19.5A, 10V

Seri

SuperMESH5™

Vgs Max

±30V

Power Dissipation

250W

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

Drain To Source Voltage Vdss

800V

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Vgsth Max Id

5V @ 100μA

Uzunluk

10mm