STB24NM60N

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

16.5ns

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Contact Plating

Tin

Gate Charge Qg Max Vgs

46nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

26 Weeks

Turn On Delay Time

11.5 ns

Temel Parça No

STB24N

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

190m Ω @ 8A, 10V

Seri

MDmesh™ II

Vgs Max

±30V

Power Dissipation

125W

Pin Sayısı

4

Kurşunsuz

Lead Free

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Current Continuous Drain Id25

17A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSSO-G2

Direnç

190MOhm

Threshold Voltage

3V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

68A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Genişlik

10.4mm