STB24N65M2

Teknik Özellikler

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Vgs Max

±25V

Seri

MDmesh™ M2

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1060pF @ 100V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

230m Ω @ 8A, 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

650V

ECCN Kodu

EAR99

Continuous Drain Current Id

16A

Ds Breakdown Voltagemin

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Terminal Pozisyonu

SINGLE

Power Dissipation Max

150W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~150°C TJ

Drainsource On Resistancemax

0.23Ohm

Current Continuous Drain Id25

16A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

26 Weeks

Temel Parça No

STB24N

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

29nC @ 10V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

650 mJ

Terminal Sayısı

2

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

64A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON