STB23NM60ND

Teknik Özellikler

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Rise Time

45ns

Temel Parça No

STB23N

Turn On Delay Time

21 ns

Gate Charge Qg Max Vgs

70nC @ 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1

Power Dissipation

150W

Vgs Max

±25V

Seri

FDmesh™ II

Drain To Source Breakdown Voltage

600V

Rds On Max Id Vgs

180m Ω @ 10A, 10V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

Pin Sayısı

4

Power Dissipation Max

150W Tc

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

19.5A Tc

Yükseklik

4.6mm

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

700 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

78A

Terminal Formu

GULL WING

Threshold Voltage

4V

Transistor Element Material

SILICON

Fet Type

N-Channel