STB23NM50N

Teknik Özellikler

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Avalanche Energy Rating Eas

254 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

68A

Terminal Formu

GULL WING

Threshold Voltage

3V

Transistor Element Material

SILICON

Direnç

190mOhm

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

17A Tc

Yükseklik

4.6mm

Fall Time Typ

29 ns

Gate To Source Voltage Vgs

25V

ECCN Kodu

EAR99

Continuous Drain Current Id

17A

Fet Type

N-Channel

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1330pF @ 50V

Turn Off Delay Time

71 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

26 Weeks

Temel Parça No

STB23N

Turn On Delay Time

6.6 ns

Gate Charge Qg Max Vgs

45nC @ 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA