STB22NM60N

Teknik Özellikler

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Threshold Voltage

3V

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

64A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSSO-G2

Direnç

220mOhm

Current Continuous Drain Id25

16A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Gate To Source Voltage Vgs

30V

Fall Time Typ

38 ns

ECCN Kodu

EAR99

Continuous Drain Current Id

16A

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

1300pF @ 50V

Turn Off Delay Time

74 ns

Gate Charge Qg Max Vgs

44nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Turn On Delay Time

11 ns

Temel Parça No

STB22N

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 100μA

Lifecycle Status

NRND (Last Updated: 8 months ago)

Kurşunsuz

Lead Free