STB21NM60ND

Teknik Özellikler

Rise Time

16ns

Vgsth Max Id

5V @ 250μA

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Number Of Elements

1

Element Configuration

Single

Temel Parça No

STB21N

Turn On Delay Time

18 ns

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Gate Charge Qg Max Vgs

60nC @ 10V

Rds On Max Id Vgs

220m Ω @ 8.5A, 10V

Drain To Source Breakdown Voltage

600V

Tepe Reflow Süresi (maks. sn)

30

Seri

FDmesh™ II

Vgs Max

±25V

Power Dissipation

140W

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

4

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Sayısı

3

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.6mm

Current Continuous Drain Id25

17A Tc

Direnç

170mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

140W Tc

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

68A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Threshold Voltage

4V

Ambalaj

Tape & Reel (TR)

Genişlik

10.4mm