STB21N65M5

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

10ns

Vgsth Max Id

5V @ 250μA

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Number Of Elements

1

Element Configuration

Single

Contact Plating

Tin

Terminal Sayısı

2

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

50nC @ 10V

Temel Parça No

STB21N

Fabrika Tedarik Süresi

17 Weeks

Rds On Max Id Vgs

190m Ω @ 8.5A, 10V

Drain To Source Breakdown Voltage

650V

Seri

MDmesh™ V

Vgs Max

±25V

Power Dissipation

125W

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

Kurşunsuz

Lead Free

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

3

Yükseklik

4.6mm

Current Continuous Drain Id25

17A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

125W Tc

Direnç

150Ohm

Transistor Element Material

SILICON

Threshold Voltage

4V

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

68A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

400 mJ