STB20NM60D

Teknik Özellikler

Transistor Element Material

SILICON

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Avalanche Energy Rating Eas

700 mJ

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

80A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Contact Plating

Tin

Gate Charge Qg Max Vgs

52nC @ 10V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Fabrika Tedarik Süresi

26 Weeks

Turn On Delay Time

25 ns

Temel Parça No

STB20N

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

20A Tc

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-65°C~150°C TJ

Rise Time

12ns

Power Dissipation Max

192W Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

5V @ 250μA

Direnç

290mOhm

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

245

ECCN Kodu

EAR99

Continuous Drain Current Id

20A

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

30V

Fall Time Typ

22 ns

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

290m Ω @ 10A, 10V