STB20NM50FDT4

Teknik Özellikler

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Temel Parça No

STB20N

Turn On Delay Time

22 ns

Gate Charge Qg Max Vgs

53nC @ 10V

Montaj Tipi

Surface Mount

Terminal Sayısı

2

Avalanche Energy Rating Eas

700 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

80A

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Element Configuration

Single

Number Of Elements

1

Drive Voltage Max Rds On Min Rds On

10V

Direnç

250mOhm

Vgsth Max Id

5V @ 250μA

Power Dissipation Max

192W Tc

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - annealed

Rise Time

20ns

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

20A Tc

Pin Sayısı

3

Fall Time Typ

15 ns

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

20A

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

3

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation

192W

Vgs Max

±30V

Seri

FDmesh™