STB20N95K5

Teknik Özellikler

Fet Type

N-Channel

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1500pF @ 100V

Turn Off Delay Time

70 ns

JESD-609 Kodu

e3

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

20 ns

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

17.5A

ECCN Kodu

EAR99

Direnç

330MOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

250W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Current Continuous Drain Id25

17.5A Tc

RoHS Durumu

ROHS3 Compliant

Ambalaj

Cut Tape (CT)

Radyasyon Dayanımı

No

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

70A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

200 mJ

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

SuperMESH5™

Vgs Max

±30V

Power Dissipation

250W

Rds On Max Id Vgs

330m Ω @ 9A, 10V

Drain To Source Breakdown Voltage

950V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

3

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

245

Vgsth Max Id

5V @ 100μA

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE