STB18NM80

Teknik Özellikler

Rise Time

28ns

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.75mm

Vgsth Max Id

5V @ 250μA

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Gate Charge Qg Max Vgs

70nC @ 10V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

26 Weeks

Turn On Delay Time

18 ns

Temel Parça No

STB18N

Rds On Max Id Vgs

295m Ω @ 8.5A, 10V

Drain To Source Breakdown Voltage

800V

Seri

MDmesh™

Vgs Max

±25V

Power Dissipation

190W

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

4

Tepe Reflow Sıcaklığı (°C)

245

Kurşunsuz

Lead Free

Pin Sayısı

3

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Current Continuous Drain Id25

17A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

190W Tc

Jesd30 Code

R-PSSO-G2

Direnç

295mOhm

Threshold Voltage

4V

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

600 mJ

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

68A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING