STB18NM60ND

Teknik Özellikler

Element Configuration

Single

Number Of Elements

1

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

187 mJ

Terminal Sayısı

2

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

52A

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

34nC @ 10V

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Ambalaj

Cut Tape (CT)

Genişlik

8.95mm

Temel Parça No

STB18N

Turn On Delay Time

55 ns

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

13A Tc

Yükseklik

4.4mm

Rise Time

15.5ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10mm

Direnç

290mOhm

Vgsth Max Id

5V @ 250μA

Continuous Drain Current Id

13A

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

600V

Kurşunsuz

Lead Free

Gate To Source Voltage Vgs

25V

Drain To Source Voltage Vdss

600V

Pin Sayısı

3

Fall Time Typ

18 ns

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Rds On Max Id Vgs

290m Ω @ 6.5A, 10V