STB16N65M5

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

150°C TJ

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

12A Tc

Yükseklik

4.6mm

Direnç

279mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

90W Tc

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

48A

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

200 mJ

Transistor Element Material

SILICON

Threshold Voltage

4V

Ambalaj

Digi-Reel®

Genişlik

10.4mm

Radyasyon Dayanımı

No

Turn Off Delay Time

6 ns

Input Capacitance Ciss Max Vds

1250pF @ 100V

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Fet Type

N-Channel

Case Connection

DRAIN

ECCN Kodu

EAR99

Continuous Drain Current Id

12A

Fall Time Typ

8 ns

Gate To Source Voltage Vgs

25V

Rise Time

7ns

Vgsth Max Id

5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.75mm

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1

Temel Parça No

STB16N

Turn On Delay Time

25 ns

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC