STB160N75F3

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

120A Tc

Yükseklik

4.6mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

-55°C~175°C TJ

Power Dissipation Max

330W Tc

Jesd30 Code

R-PSSO-G2

Direnç

3.7MOhm

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

480A

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Genişlik

10.4mm

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Nominal Vgs

4 V

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

6750pF @ 25V

Turn Off Delay Time

100 ns

Terminal

SMD/SMT

Fet Type

N-Channel

Continuous Drain Current Id

60A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

15 ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

65ns

Uzunluk

10.75mm

Drive Voltage Max Rds On Min Rds On

10V

Vgsth Max Id

4V @ 250μA

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Gate Charge Qg Max Vgs

85nC @ 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks