STB15N65M5

Teknik Özellikler

Case Connection

DRAIN

Fet Type

N-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

810pF @ 100V

Turn Off Delay Time

30 ns

JESD-609 Kodu

e3

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

11A

ECCN Kodu

EAR99

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

85W Tc

Direnç

340MOhm

Current Continuous Drain Id25

11A Tc

Yükseklik

4.6mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Ambalaj

Tape & Reel (TR)

Genişlik

9.35mm

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

44A

Transistor Application

SWITCHING

Seri

MDmesh™ V

Vgs Max

±25V

Power Dissipation

85W

Tepe Reflow Süresi (maks. sn)

30

Rds On Max Id Vgs

340m Ω @ 5.5A, 10V

Drain To Source Breakdown Voltage

650V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj

Surface Mount

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

245

Vgsth Max Id

5V @ 250μA

Uzunluk

10.4mm

Drive Voltage Max Rds On Min Rds On

10V