STB155N3LH6

Teknik Özellikler

Transistor Element Material

SILICON

Threshold Voltage

1V

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

525 mJ

Genişlik

10.4mm

Ambalaj

Cut Tape (CT)

Radyasyon Dayanımı

No

Yükseklik

4.6mm

Current Continuous Drain Id25

80A Tc

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

110W Tc

Direnç

3MOhm

Continuous Drain Current Id

80A

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Fall Time Typ

40 ns

Jedec95 Code

TO-252

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

100 ns

Input Capacitance Ciss Max Vds

3800pF @ 25V

JESD-609 Kodu

e3

Case Connection

DRAIN

Fet Type

N-Channel

Number Of Elements

1

Element Configuration

Single

Terminal Sayısı

2

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

80nC @ 5V

Turn On Delay Time

15 ns

Temel Parça No

STB155N

Fabrika Tedarik Süresi

20 Weeks

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Rise Time

85ns