STB13N60M2

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Vgsth Max Id

4V @ 250μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Rise Time

10ns

Gate Charge Qg Max Vgs

17nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

26 Weeks

Temel Parça No

STB13N

Turn On Delay Time

11 ns

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Power Dissipation

110W

Vgs Max

±25V

Seri

MDmesh™ II Plus

Drain To Source Breakdown Voltage

650V

Rds On Max Id Vgs

380m Ω @ 5.5A, 10V

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

600V

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Direnç

380mOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

11A Tc

Yükseklik

4.6mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Radyasyon Dayanımı

No

Genişlik

9.35mm

Ambalaj

Cut Tape (CT)

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

125 mJ

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

44A

Terminal Formu

GULL WING

Case Connection

DRAIN