STB12NM50T4

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

48A

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

400 mJ

Transistor Element Material

SILICON

Threshold Voltage

4V

Direnç

350mOhm

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

160W Tc

Çalışma Sıcaklığı

-65°C~150°C TJ

Current Continuous Drain Id25

12A Tc

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

30V

ECCN Kodu

EAR99

Continuous Drain Current Id

12A

Fet Type

N-Channel

Akım Değeri

12A

Input Capacitance Ciss Max Vds

1000pF @ 25V

JESD-609 Kodu

e3

Nominal Vgs

4 V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

20 ns

Temel Parça No

STB12N

Fabrika Tedarik Süresi

26 Weeks

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

39nC @ 10V

Contact Plating

Tin

Terminal Sayısı

2

Element Configuration

Single

Number Of Elements

1

Vgsth Max Id

5V @ 50μA

Drive Voltage Max Rds On Min Rds On

10V

Voltage Rated Dc

550V

Rise Time

10ns

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)