STB10NK60ZT4

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Rise Time

20ns

Voltage Rated Dc

600V

Drive Voltage Max Rds On Min Rds On

10V

Uzunluk

10.4mm

Vgsth Max Id

4.5V @ 250μA

Element Configuration

Single

Number Of Elements

1

Terminal Sayısı

2

Gate Charge Qg Max Vgs

70nC @ 10V

Montaj Tipi

Surface Mount

Reach Svhc

No SVHC

Temel Parça No

STB10N

Turn On Delay Time

20 ns

Rds On Max Id Vgs

750m Ω @ 4.5A, 10V

Drain To Source Breakdown Voltage

600V

Seri

SuperMESH™

Vgs Max

±30V

Power Dissipation

115W

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

245

Pin Sayısı

4

Dual Supply Voltage

600V

Kurşunsuz

Lead Free

Pin Sayısı

3

Montaj

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

10A Tc

Yükseklik

4.6mm

Terminal Kaplaması

Matte Tin (Sn) - annealed

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

115W Tc

Jesd30 Code

R-PSSO-G2

Direnç

750mOhm

Threshold Voltage

3.75V

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE