STB10NK60Z-1

Teknik Özellikler

Gate To Source Voltage Vgs

30V

Transistor Element Material

SILICON

Power Dissipation

115W

Continuous Drain Current Id

10A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

20 ns

Element Configuration

Single

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

600V

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

55 ns

Montaj

Through Hole

Transistor Application

SWITCHING

Vgs Max

±30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

20ns

Parça Durumu

Not For New Designs

Number Of Elements

1

Current Continuous Drain Id25

10A Tc

ECCN Kodu

EAR99

Rds On Max Id Vgs

750m Ω @ 4.5A, 10V

Ambalaj

Tube

Terminal Sayısı

3

Montaj Tipi

Through Hole

Power Dissipation Max

115W Tc

Fall Time Typ

30 ns

Vgsth Max Id

4.5V @ 250μA

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Gate Charge Qg Max Vgs

70nC @ 10V

Temel Parça No

STB10N

Seri

SuperMESH™

Input Capacitance Ciss Max Vds

1370pF @ 25V

Pin Sayısı

3

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.75Ohm