STB100N10F7

Teknik Özellikler

Rds On Max Id Vgs

8m Ω @ 40A, 10V

ECCN Kodu

EAR99

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Terminal Sayısı

3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

Current Continuous Drain Id25

80A Tc

Number Of Elements

1

Parça Durumu

Active

Rise Time

40ns

Weight

3.949996g

Vgsth Max Id

4.5V @ 250μA

Fabrika Tedarik Süresi

38 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Avalanche Energy Rating Eas

400 mJ

Fall Time Typ

15 ns

Power Dissipation Max

150W Tc

Pin Sayısı

3

Gate Charge Qg Max Vgs

61nC @ 10V

Genişlik

9.35mm

Temel Parça No

STB100N

Input Capacitance Ciss Max Vds

4369pF @ 50V

Seri

DeepGATE™, STripFET™ VII

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.008Ohm

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Continuous Drain Current Id

80A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Channels

1

Turn On Delay Time

27 ns

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

100V

Jedec95 Code

TO-220AB