IRF630

Teknik Özellikler

Vgs Max

±20V

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED

Akım Değeri

9A

Reverse Recovery Time

170 ns

Rds On Max Id Vgs

400m Ω @ 4.5A, 10V

Weight

4.535924g

Drain Currentmax Abs Id

9A

Genişlik

4.6mm

Continuous Drain Current Id

9A

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Çalışma Sıcaklığı

-65°C~150°C TJ

Dual Supply Voltage

200V

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Uzunluk

10.4mm

Threshold Voltage

3V

Nominal Vgs

3 V

Input Capacitance Ciss Max Vds

700pF @ 25V

Terminal Sayısı

3

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Element Configuration

Single

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Operating Mode

ENHANCEMENT MODE

Yükseklik

15.75mm

Feedback Capmax Crss

50 pF

Gate Charge Qg Max Vgs

45nC @ 10V

Lead Pitch

2.54mm

Kılıf / Paket

TO-220-3

Turn On Delay Time

10 ns

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Seri

MESH OVERLAY™ II

Drain To Source Breakdown Voltage

200V

Ambalaj

Tube