RZF030P01TL

Teknik Özellikler

Vgs Max

±10V

Drain To Source Breakdown Voltage

-12V

Nominal Vgs

-300 mV

Pin Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Vgsth Max Id

1V @ 1mA

Rise Time

40ns

Element Configuration

Single

Transistor Application

SWITCHING

Yayın Yılı

2004

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

800mW Ta

Fabrika Tedarik Süresi

16 Weeks

Reach Svhc

No SVHC

Kurşunsuz

Lead Free

Turn On Delay Time

9 ns

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Genişlik

1.7mm

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e2

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

150°C TJ

Montaj Tipi

Surface Mount

Number Of Elements

1

Continuous Drain Current Id

3A

Rds On Max Id Vgs

39m Ω @ 3A, 4.5V

Drain To Source Voltage Vdss

12V

Fet Type

P-Channel

Transistor Element Material

SILICON

Kılıf / Paket

3-SMD, Flat Lead

Current Continuous Drain Id25

3A Ta

Gate Charge Qg Max Vgs

18nC @ 4.5V

Yükseklik

770μm

Pin Sayısı

3

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

10

Turn Off Delay Time

210 ns

Parça Durumu

Active