RYM002N05T2CL

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

0.9V 4.5V

Number Of Channels

1

JESD-609 Kodu

e2

Turn Off Delay Time

17 ns

ECCN Kodu

EAR99

Turn On Delay Time

5 ns

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

0.2A

Çalışma Sıcaklığı

150°C TJ

Input Capacitance Ciss Max Vds

26pF @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Fabrika Tedarik Süresi

16 Weeks

Drain To Source Breakdown Voltage

50V

Power Dissipation Max

150mW Ta

Current Continuous Drain Id25

200mA Ta

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Gate To Source Voltage Vgs

8V

Continuous Drain Current Id

200mA

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

2.2 Ω @ 200mA, 4.5V

Element Configuration

Single

Jesd30 Code

R-PDSO-F3

Montaj

Surface Mount

Fall Time Typ

43 ns

Drainsource On Resistancemax

2.8Ohm

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

SOT-723

Vgs Max

±8V

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Terminal Sayısı

3

Terminal Formu

FLAT

Vgsth Max Id

800mV @ 1mA

Kurşunsuz

Lead Free