RUS100N02TB

Teknik Özellikler

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

20V

Number Of Elements

1

Çalışma Sıcaklığı

150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±10V

Fet Type

N-Channel

Direnç

8mOhm

ECCN Kodu

EAR99

Parça Durumu

Not For New Designs

Ambalaj

Cut Tape (CT)

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

2250pF @ 10V

Terminal Sayısı

8

REACH Uyumluluk Kodu

not_compliant

Drain To Source Voltage Vdss

20V

Vgsth Max Id

1V @ 1mA

Fabrika Tedarik Süresi

10 Weeks

Pulsed Drain Currentmax Idm

36A

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Threshold Voltage

1V

Power Dissipation Max

2W Ta

Gate Charge Qg Max Vgs

24nC @ 4.5V

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

12m Ω @ 10A, 4.5V

Yayın Yılı

2014

Reach Svhc

No SVHC

Terminal Formu

GULL WING

Current Continuous Drain Id25

10A Ta

Continuous Drain Current Id

10A

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

Pin Sayısı

8