RU1J002YNTCL

Teknik Özellikler

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Power Dissipation

150mW

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

17 ns

Vgsth Max Id

800mV @ 1mA

Fet Type

N-Channel

Drainsource On Resistancemax

2.8Ohm

Çalışma Sıcaklığı

150°C TJ

Drain Currentmax Abs Id

0.2A

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

8V

Pin Sayısı

85

Yükseklik

1.05mm

Number Of Channels

1

Ambalaj

Cut Tape (CT)

Kılıf / Paket

SC-85

Power Dissipation Max

150mW Ta

Number Of Elements

1

Vgs Max

±8V

Turn On Delay Time

5 ns

Max Junction Temperature Tj

150°C

Drain To Source Breakdown Voltage

50V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Sayısı

3

ECCN Kodu

EAR99

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

26pF @ 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

200mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2016

Rds On Max Id Vgs

2.2 Ω @ 200mA, 4.5V

Drive Voltage Max Rds On Min Rds On

0.9V 4.5V