RT1A060APTR

Teknik Özellikler

Ds Breakdown Voltagemin

12V

Power Dissipation Max

600mW Ta

Pin Sayısı

8

Current Continuous Drain Id25

6A Ta

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.019Ohm

ECCN Kodu

EAR99

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Abs Id

6A

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

8

Ambalaj

Cut Tape (CT)

Number Of Elements

1

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

7800pF @ 6V

Fabrika Tedarik Süresi

10 Weeks

Jesd30 Code

R-PDSO-F8

Yayın Yılı

2012

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

80nC @ 4.5V

Drain To Source Voltage Vdss

12V

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

6A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Lead Free

Rds On Max Id Vgs

19m Ω @ 6A, 4.5V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

18A

Kılıf / Paket

8-SMD, Flat Lead

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Vgs Max

-8V

Terminal Pozisyonu

DUAL

Vgsth Max Id

1V @ 1mA