RSJ650N10TL

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Drain To Source Voltage Vdss

100V

Turn Off Delay Time

640 ns

Pin Sayısı

3

Pin Sayısı

83

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Fet Type

N-Channel

Montaj

Surface Mount

Current Continuous Drain Id25

65A Ta

Terminal Sayısı

2

Vgsth Max Id

2.5V @ 1mA

Configuration

SINGLE WITH BUILT-IN DIODE

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

10780pF @ 25V

Kurşunsuz

Lead Free

Rise Time

170ns

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Continuous Drain Current Id

65A

Drive Voltage Max Rds On Min Rds On

4V 10V

Power Dissipation Max

100W Tc

Turn On Delay Time

45 ns

Vgs Max

±20V

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

9.1m Ω @ 32.5A, 10V

Jesd30 Code

R-PSSO-G2

Parça Durumu

Active

Ds Breakdown Voltagemin

100V

Gate Charge Qg Max Vgs

260nC @ 10V

Fabrika Tedarik Süresi

20 Weeks

Yayın Yılı

2011

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

Pulsed Drain Currentmax Idm

130A