RS1G180MNTB

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F5

Current Continuous Drain Id25

18A Ta 80A Tc

Drain To Source Voltage Vdss

40V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.5V @ 1mA

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2006

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

72A

Input Capacitance Ciss Max Vds

1293pF @ 20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.0092Ohm

Case Connection

DRAIN

Continuous Drain Current Id

18A

Transistor Element Material

SILICON

Number Of Elements

1

Ds Breakdown Voltagemin

40V

Terminal Formu

FLAT

Fet Type

N-Channel

Terminal Sayısı

5

Fabrika Tedarik Süresi

20 Weeks

Pin Sayısı

8

Gate Charge Qg Max Vgs

19.5nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Power Dissipation Max

3W Ta 30W Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

7m Ω @ 18A, 10V

Kurşunsuz

Lead Free

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-PowerTDFN

Vgs Max

±20V