RS1E130GNTB

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Vgs Max

±20V

Kılıf / Paket

8-PowerTDFN

Parça Durumu

Active

Montaj Tipi

Surface Mount

Power Dissipation Max

3W Ta 22.2W Tc

Rds On Max Id Vgs

11.7m Ω @ 13A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

20 Weeks

Terminal Sayısı

5

Fet Type

N-Channel

Terminal Formu

FLAT

Gate Charge Qg Max Vgs

7.9nC @ 10V

Yüzey Montaj

YES

Ds Breakdown Voltagemin

30V

Number Of Elements

1

Transistor Element Material

SILICON

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

52A

Input Capacitance Ciss Max Vds

420pF @ 15V

Drainsource On Resistancemax

0.0152Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2013

Drain Currentmax Abs Id

13A

Vgsth Max Id

2.5V @ 1mA

Current Continuous Drain Id25

13A Ta

Jesd30 Code

R-PDSO-F5

RoHS Durumu

ROHS3 Compliant

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

30V